inchange semiconductor isc product specification isc website www.iscsemi.cn isc triacs BT131-600E features with to-92 package glass passivated,sens itive gate triacs in a plastic envelope intended for use in general purpos e bidirectional switching and phase control applications. these devices are intended to be interfaced directly to microcontrollers,logic intergrated circuits and other low power gate trigger circuit. absolute maximum ratings(ta=25 ) symbol parameter min unit v drm repetitive peak off-state voltage 600 v v rrm repetitive peak off-state voltage 600 v i t(rms) rms on-state current (full sine wave) t lead 51 1 a i tsm non-repetitive peak on-state current 16 a p gm peak gate power dissipation 5 w p g(av) average gate power dissipation 0.5 w t j operating junction temperature 110 t stg storage temperature -45~150 electrical characteristics (t c =25 unless otherwise specified) symbol parameter conditions min max unit v drm repetitive peak off-state voltage i d =0.1ma 600 v v rrm repetitive peak reverse voltage i d =0.5ma 600 v i d off-state leakage current v d = v drm(max), t j = 125 0.5 ma i gt gate trigger current v d =12v; i t = 0.1a 10 ma 10 10 25 v tm on-state voltage i t =1.6a 1.6 v i h holding current i gt =0.1a ,v d = 12v 5 ma v gt gate trigger voltage v d =12v ; r l =100 all quadrant 1.5 v
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